Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:31:37.118Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

Published online by Cambridge University Press:  15 February 2011

A. G. Ulyashin ,
Yu. A. Bumay ,
W. R. Fahrner ,
A. I. Ivanovo ,
R. Job  and
L. Palmetshofer
A. G. Ulyashin
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
Yu. A. Bumay
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
W. R. Fahrner
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
A. I. Ivanovo
Affiliation:
Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus
R. Job
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
L. Palmetshofer
Affiliation:
J. Kepler University, A-4040 Linz, Austria.
Get access

Abstract

The effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 95
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Brani, M., Bisero, D., Tonini, R., Ottaviani, G., Queirolo, G. and Bottini, R., Phys. Rev. B 49, 5291 (1994).Google Scholar
[2] Pearton, S.J., Corbett, J.W., Stavola, M., Hydrogen in Crystalline Semiconductors, Springer-Verlag, Berlin, Heidelberg, New York (1992).Google Scholar
[3] Cerofolini, G.F., Balboni, R., Bisero, D., Comi, F., Frabboni, S., Ottaviani, G., Tonini, R., Brusa, R.S., Zecca, A., Ceschini, M., Giebel, G. and Pavesi, L., Phys. Stat. Sol. (a) 150, 539 (1995).Google Scholar
[4] Brown, A.R., Claybourn, M., Murray, R., Nandra, P.S., Newman, R.C., Tucker, J.H., Semicond. Sci. Technol. 3, 591 (1988).Google Scholar
[5] Murray, R., Brown, A.R., Newman, R.C., Mater. Sci. Eng. B. 4, 299 (1990).Google Scholar
[6] Stein, H.J., Hahn, S.K., Appl. Phys. Lett., 56, 63 (1990).Google Scholar
[7] Stein, H.J., Hahn, S.K., J. Appl. Phys. 75, 3477 (1994).Google Scholar
[8] Stein, H.J., Hahn, S.K., J. Electrochem. Soc. 142, 1242 (1995).Google Scholar
[9] Tamura, M., Mater. Sci. Reports. 6, 141 (1991).Google Scholar
[10] Shimura, F. (editor), Oxygen in Silicon, Academic Press, New York (1994).Google Scholar
[11] Ulyashin, A.G., Bumay, Yu.A., Ivanov, A.I., Varichenko, V.S., Zaitsev, A.M., Kazychits, N.M., Fahrner, W.R., in: Early Stages of Oxygen Precipitation in Silicon, (editer: Jones, R.), Kluwer Academic Publishers, Dordrecht (1996), p. 455.Google Scholar
[12] Wong-Leung, J., Ascheron, C.F., Petravic, M., Elliman, R.G., Williams, J.S., Appl. Phys. Lett. 66, 1231 (1995).Google Scholar
[13] Mohadjery, B., Williams, J.S., Wong-Leung, J., Appl. Phys. Lett. 66, 1889 (1995).Google Scholar
[14] Mizuno, B., Kubota, M., Nomura, N., Iwasaki, H., J. Appl. Phys. 62, 2566 (1987).Google Scholar
[15] Medernach, J.W., Hill, T.A., Myers, S.M., Headley, T.J., J. Electrochem. Soc. 143, 725 (1996).Google Scholar
[16] Job, R., Borchert, D., Bumay, Y.A., Fahrner, W.R., Grabosch, G., Khorunzhii, I.A., Ulyashin, A.G., The Conversion of Czochralski Silicon from P-Type to N-Type…, this proceedings volume. The kind support of Dr. Bernd Himmerich (VDI-TZ, Germany) is gratefully acknowledged. Google Scholar