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Oxygen and Iron Redistribution upon Thermal Treatment in Iron Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

B. Pivac ,
A. Borghesi ,
L. Ottolini ,
M. Geddo ,
A. Piaggi  and
A. Stella
B. Pivac
Affiliation:
Permanent Address: R. Boskovic Institute, P.O.B. 1016, YU-41000 Zagreb, Yugoslavia.
A. Borghesi
Affiliation:
Dipaxtimento di Fisica-Universitá di Pavia, 1-27100 Pavia, Italy
L. Ottolini
Affiliation:
Centro di Studio pet Ja Cristallografia Stutturale del C.N.R., 1-27100 Pavia, Italy
M. Geddo
Affiliation:
Dipaxtimento di Fisica-Universitá di Pavia, 1-27100 Pavia, Italy
A. Piaggi
Affiliation:
Dipaxtimento di Fisica-Universitá di Pavia, 1-27100 Pavia, Italy
A. Stella
Affiliation:
Dipaxtimento di Fisica-Universitá di Pavia, 1-27100 Pavia, Italy
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Abstract

In order to study the iron-oxygen interaction and their redistribution in silicon, different doses of 100 keV iron ions have been implanted into CZ silicon substrates, and subsequently annealed. The redistribution of iron and oxygen upon thermal treatment in nitrogen atmosphere was monitored with SIMS and FTIR measurements. A significant gettering of iron as well as of oxygen into the layer close to the implanted surface has been found only for doses exceeding the critical fluence, therefore indicating that the structural disorder and associated lattice strain field are the main driving forces for gettering mechanism. It has been found, however, that for doses above the critical fluence not all iron ions have been trapped into the damaged region, but a significant part of them have diffused into the bulk of the material, unaffected by gettered oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 919
Copyright
Copyright © Materials Research Society 1990

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References

1 Ourmazd, A., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J.C. Jr., Pearton, S.J., Corbett, J.W. and Pennycook, S.J., MRS, Pittsburgh, 1986, p.331 Google Scholar
2 Borghesi, A., Geddo, M., Stella, A. and Chen-Jia, Chen, J. Appl. Phys. 63, 2864 (1988)Google Scholar
3 Sadana, D.K., in Impurity Diffusion and Gettering in Silicon, edited by Fair, R.B., Pearce, C.W. and Washburn, J., MRS, Pittsburgh, 1985, p.245 Google Scholar
4 Wang, P.W., Cheng, H.S., Gibson, W.M. and Corbett, J.W., J. Appl. Phys., 60, 1336 (1986)Google Scholar
5 Magee, T.J., Leung, C., Kawayoshi, H., Furman, B., Evans, C.A. Jr. and Day, D.S., Appl. Phys. Lett., 39, 260 (1981)Google Scholar
6 Magee, T.J., Leung, C., Kawayoshi, H., Orman, R., Furman, B.K., Evans, C.A. Jr. and Day, D.S., Appl. Phys. Lett., 39, 413 (1981)Google Scholar
7 Corbett, J.W., Karins, J.P. and Tan, T.Y., Nucl. Instrum. Methods 182/183, 457 (1981)Google Scholar
8 Dennis, J.R. and Hale, E.B., J. Appl. Phys., 49, 1119 (1978)Google Scholar
9 Colas, E.G. and Weber, E.R., Appl. Phys. Lett., 48, 1371 (1986)Google Scholar