Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T06:57:35.383Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation study of hydrogenated amorphous silicon carbide films

Published online by Cambridge University Press:  21 March 2011

W. K. Choi ,
L. P. Lee  and
C. C. Leoy
W. K. Choi
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
L. P. Lee
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
C. C. Leoy
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
Get access

Abstract

We present results of an oxidation study of a-Si1−xCx:H films prepared by the plasma enhanced chemical vapor deposition of silane and acetylene. The composition (i.e. x) of the samples was determined by the flow rates of silane and acetylene. Oxidation was carried out at 400 to 850°C in dry oxygen ambient. The infrared (IR) spectra of the as-prepared films showed the intensity of the Si-C peak decreases and the Si-CH3 peak increases as x increases. The Si-H peak shifts to higher frequency as x increases. Note that the incorporation of CH3 radicals in a-Si1−xCx:H films has shown to introduce voids and increased the porosity of the films. The IR spectra of the oxidized samples showed clear Si-O stretching and rocking/wagging modes for all films. We suggest that the growth of oxide on a-Si1−xCx:H is a result of voids that facilitate the diffusion of oxidants into the film. We shown that the activation energy, obtained from the linear rate region of the oxide growth, was far less than the dissociation energies of the Si-Si, Si-C and Si-H bonds. We suggest that this could be due to the amorphous nature of the samples that caused the various chemical bonds to be weaker during oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.15
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Choi, W.K., Defect and Diffusion Forum 177–178, 29 (1999).Google Scholar
2. Lee, M.H., Eldrige, J.M., Liclican, L. and Richardson, R.E., J. Electrochem. Soc. 137, 2266 (1990).Google Scholar
3. Kortright, J.B. and Windt, D.L., Apt. Opt. 27, 2481 (1988).Google Scholar
4. Klump, A., Schabber, U., Offerreins, H.L., Kühl, K. and Sandmaier, H., Sensors and Actuators A 41–42, 310 (1994).Google Scholar
5. Demichelis, F., Pirri, C.F., Tresso, E., Rigato, V., and DellaMea, G., J. Non-Cryst. Solids, 128, 133 (1991).Google Scholar
6. Choi, W.K., Ong, T.Y., Tan, L.S., Loh, F.C., and Tan, K.L., J. Appl. Phys. 83, 4968 (1998).Google Scholar
7. Choi, W.K. and Gangadharan, S., Mater. Sci. & Eng. B 75, 174 (2000).Google Scholar
8. Basa, D.K. and Smith, F.W., Mater. Res. Soc. Symp. Proc. 162, 439 (1990).Google Scholar
9. Choi, W.K., Lee, L.P., Foo, S.L, Gangadharan, S., Chong, N.B. and Tan, L.S., to appear in January issue of J. Appl. Phys.Google Scholar
10. Choi, W.K., Chan, Y.M., Ling, C.H., Lee, Y., Gopalakrishnan, R., and Tan, K.L., J. Appl. Phys. 77, 827 (1995).Google Scholar
11. Mackenzie, D.R., J. Phys. D 18, 1935 (1985).Google Scholar
12. Wieder, H., Cardona, M., and Guarnieri, C.R., Phys. Status Solidi B 92, 99 (1979).Google Scholar
13. Catherine, Y., Zamouche, A., Bullot, J., and Gauthier, J., Thin Solid Films 109, 145 (1983).Google Scholar
14. Bullot, J. and Schmidt, M.P., Phys. Status Solidi B 143, 345 (1987).Google Scholar
15. McKurdy, P.R., Truitt, J.M., and Fisher, E.R.,J. Electrochem. Soc. 145, 3271 (1998).Google Scholar
16. Arce, R., Koropecki, R.R., Buitrago, R.H., Alvarez, F. and Chambouleyron, I., J. Appl. Phys. 66, 4544 (1989).Google Scholar
17. Eldridge, J.M., Moore, J.O., Olive, G., and Dunton, V., J. Electrochem Soc. 137, 2266 (1990).Google Scholar
18. Dean, J. A., Lange's Handbook of Chemistry, McGraw-Hill Inc., 14th Edition, p. 4.33 (1992).Google Scholar