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Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering

Published online by Cambridge University Press:  15 February 2011

S. Hymes ,
K. S. Kumar ,
S. P. Murarka ,
W. Wang  and
W. A. Lanford
S. Hymes
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
K. S. Kumar
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
W. Wang
Affiliation:
Department of Physics, The University at Albany - SUNY, Albany, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, The University at Albany - SUNY, Albany, NY 12222
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Abstract

To enhance the corrosion resistance and reliability of the proposed copper interconnections in silicon integrated circuits, alloying with small amounts thermodynamically favorable elements has been pursued. In the present investigation dilute copper (boron) alloy thin films (in boron concentration range of 0–4 at % in copper) were deposited by DC magnetron co-sputtering using a high purity copper and Cu-4 at. % B targets. Films were then annealed in Ar-3% H2, pure Ar, vacuum, and air ambients in the temperature range of 200–500°C. Sheet resistance, Rutherford backscattering, x-ray diffraction measurements were made to characterize the films. The residual resistivity of the as-deposited alloy films was found to be 5.3 μΩ-cm/at %. To obtain sufficiently low working resistivity, an alloy content below 0.5 at % is suggested for application as a potential metallization material. The addition of boron, which is the common dopant in Si. to the copper films offers considerable oxidation protection. The resulting oxidation rates are considerably lower than that for pure copper films. All this will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 17
Copyright
Copyright © Materials Research Society 1996

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