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Oxidation Resistance of Copper Alloy Thin Films Formed by Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

P. Atanasova ,
V. Bhaskaran ,
T. Kodas  and
M. Hampden-Smith
P. Atanasova
Affiliation:
Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
V. Bhaskaran
Affiliation:
Departments of Chemical & Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131
T. Kodas
Affiliation:
Departments of Chemical & Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
M. Hampden-Smith
Affiliation:
Chemistry, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM 87131
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Abstract

Co-deposition of copper-palladium alloy films was demonstrated using low-pressure CVD from individual precursors - (hexafluoroacetylacetonato)copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)vtms] and palladium(II)bis(hexafluoroacetylacetonate) [Pd(hfac)2], for Cu and Pd respectively. High-purity alloy films with controlled composition, microstructure and morphology were prepared and their oxidation behavior was examined at different temperatures and compared with that of pure copper CVD films with similar morphology. As-deposited copper-palladium alloy films showed improved resistance to oxidation up to 300°C in air. Enhanced oxidation resistance compared to Cu CVD films was observed at concentrations of palladium as low as 0.5 at. %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 25
Copyright
Copyright © Materials Research Society 1996

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