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Oxidation of Structured Silicon Thin Films for Inverse Silicon Square Spiral Photonic Crystal Fabrication

Published online by Cambridge University Press:  01 February 2011

Mark Alan Summers
Affiliation:
[email protected], University of Alberta, Electrical and Computer Engineering, 9107 116 ST NW, Edmonton, Alberta, T6X 1E8, Canada, (780)492-7926, (780)492-2863
Michael J Brett
Affiliation:
[email protected], University of Alberta, Department of Electrical and Computer Engineering, 9107 116 St. NW, Edmonton, AB, T6G 2V4, Canada
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Abstract

Photonic Band Gap (PBG) crystals are artificially engineered structures of periodically alternating dielectric materials that enable manipulation of light in unique ways. As proposed by O. Toader and S. John, large bandwidth PBG crystals based on the diamond lattice can be constructed by fabricating a two-dimensional periodic array of silicon square spirals. Furthermore, an improved photonic crystal can be constructed by fabricating the inverse of this structure, such that void square spirals are situated in a silicon backfill. This structure yields a theoretical maximum PBG of 24%, while the direct silicon square spiral structure yields a theoretical maximum of 16%. [1]

The direct silicon square spiral structure has previously been successfully fabricated using the glancing angle deposition (GLAD) process [2]. The GLAD fabrication process uses advanced substrate motion and oblique incidence deposition to engineer precise nanostructures such as helices, chevrons, or polygonal spirals. These nanostructures are grown with lateral and longitudinal periodicity using a pre-patterned substrate consisting of a tetragonal array of relief structures.

Upon successful fabrication of the direct silicon square spiral structure, it was proposed that fabrication of the inverse structure could be completed using a backfill process with a silica template [2]. A periodic array of silica square spirals would be fabricated using the GLAD technique. The template would then be filled with amorphous silicon using low-pressure chemical vapour deposition (LPCVD). To reveal the inverse silicon structure, the silica template would be removed by means of chemical etching with an isotropic chemical etchant. Creation of a suitable template for the inversion of silicon square spirals is an important step in the realization of the inverse silicon square spiral PBG crystal. However, we have seen empirically that silica square spiral films grown directly via the GLAD technique are structurally inferior to silicon films. We present an intermediate step for the fabrication of a suitable template, whereby a silicon structure is fabricated with appropriate geometries and subsequently oxidized. The procedure has been optimized to ensure a thorough oxidization of the silicon posts, while minimally distorting the structure of the square spiral template.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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