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Oxidation of Si via Solid State Interfacial Reaction with Deposited Sn-Doped In2O3

Published online by Cambridge University Press:  21 February 2011

Cleva W. OW Yang ,
Yuzo Shigesato  and
David C. Paine
Cleva W. OW Yang
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Yuzo Shigesato
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
David C. Paine
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

We have developed a novel solid-state method for forming interfacial silicon dioxide by a two step process of rf sputtering tin-doped indium oxide (ITO), a transparent conductor, onto Si substrates followed by annealing at 800°C in flowing ultra-high purity nitrogen. TEM, XRD, FTIR, and C-V measurements were used to characterize the microstructure and morphology of as-deposited and annealed samples. The silicon dioxide layer grows interfacially between Si and In2O3 and, for a 5 nm thick oxide, is planar on a 2–4 monolayer scale over hundreds of nm. The kinetics of the solid-state interfacial oxidation reaction were studied and a model has been developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 109
Copyright
Copyright © Materials Research Society 1994

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References

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