Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-07-02T21:19:24.477Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation of Gallium Nitride Epilayers in Dry Oxygen

Published online by Cambridge University Press:  03 September 2012

P. Chen ,
R. Zhang ,
X.F. Xu ,
Z.Z. Chen ,
Y.G. Zhou ,
S.Y. Xie ,
Y. Shi ,
B. Shen ,
S.L. Gu  and
Z.C. Huang
...Show all authors
P. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
X.F. Xu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Z.Z. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Y.G. Zhou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
S.Y. Xie
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
S.L. Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Z.C. Huang
Affiliation:
Raytheon ITSS, 4500 Forbes Bulivard, MD 20771
J. Hu
Affiliation:
Syscaching Corp., Aliso Viejo, CA 92324
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Get access

Abstract

The oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition were used in this work. The oxidation of GaN in dry oxygen was performed at various temperatures for different time. The oxide was identified as the monoclinic β-Ga2O3 by a θ-2θ scan X-ray diffraction (XRD). The scanning electron microscope observation shows a rough oxide surface and an expansion of the volume. XRD data also showed that the oxidation of GaN began to occur at 800°C. The GaN diffraction peaks disappeared at 1050°C for 4 h or at 1100°C for 1 h, which indicates that the GaN epilayers has been completely oxidized. From these results, it was found that the oxidation of GaN in dry oxygen was not layer-by-layer and limited by the interfacial reaction and diffusion mechanism at different temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.71
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., senoh, M., Nagahara, S., Iwasa, N., Yamada, T., Matsuahita, T., Kiyoku, H. and Sugimoto, Y., Jpn.J.Appl.Phys. 135, L74 (1996).Google Scholar
2. Nakamura, S., senoh, M., Nagahara, S., Iwasa, N., Yamada, T., Matsuahita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemeoto, H., Sano, M., and Chocho, K., Appl.Phys.Lett, 72, 2014 (1998).Google Scholar
3. Ren, F., Hong, M., Chu, S.N.G., Marcus, M.A., Schurman, M.J., Baca, A., Pearton, S.J. and Abernathy, C.R., Appl.Phys.Lett, 73, 3893 (1998).Google Scholar
4. Wolter, S.D., Mohney, S.E., Venugopalan, H., Wickenden, A.E. and Koleske, D.D., J.Electrochem.Soc., 145, 629 (1998).Google Scholar
5. Shen, B., Zhou, Y.G., Chen, Z.Z., Chen, P., Zhang, R., Shi, Y., Zheng, Y.D., Tong, W. and Park, W., Appl.Phys.A, 68, 593 (1999)Google Scholar
6. Koleske, D.D., Wickenden, A.E., Henry, R.L., DeSisto, W.J., and Gorman, R.J., J.Appl.Phys., 84, 1998 (1999).Google Scholar
7. Zevin, L.S. and Kimmel, G., in Quantitative X-Ray Diffractometry, Mureinik, I., Editor, Springer-Verlag, New York (1998).Google Scholar