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Oxidation of Au/Si Films For Self-Confined Interconnects

Published online by Cambridge University Press:  22 February 2011

C. A. Hewett ,
D. M. Scott ,
S. S. Lau  and
M. Bartur
C. A. Hewett
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
D. M. Scott
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
M. Bartur
Affiliation:
Caltech, Pasadena, CA 91125
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Abstract

We have explored the possibility of oxidizing a Au/Si composite layer or a Au-Si alloyed layer on SiO2 substrates to form a highly conductive narrow line with a protective SiO2 layer over it. A number of sample configurations and annealing ambients have been investigated. It was found that co-evaporated Au-Si alloys ( ∼30 at. % Au) showed no oxide formation for annealing temperatures between 200°C and 800°C in a flowing O2 ambient (annealing time ≃ 2.25hrs). Samples with a configuration of SiO2/Au/Si showed mixing of the Au and Si layers, but no appreciable oxide formation until after annealing at 800°C in a flowing O2. Samples with a configuration of SiO2/Si/Au, however, showed uniform and smooth oxide growth on top of the Au layer after annealing in air at 200°C. The structural and electrical properties of the self-confined Au lines will be discussed. This process may be potentially useful for narrow interconnects on VLSl chips.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 40: Symposium J – Electronic Packaging Materials Science I , 1984 , 329
Copyright
Copyright © Materials Research Society 1985

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References

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