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Oxidation Modelling for SiC

Published online by Cambridge University Press:  10 February 2011

N. G. Wright ,
C. M. Johnson  and
A. G. O'neill
N. G. Wright
Affiliation:
Dept. Of Electrical and Electronic Engineering, The University of Newcastle upon Tyne, Newcastle UK, NEI 7RU, [email protected]
C. M. Johnson
Affiliation:
Dept. Of Electrical and Electronic Engineering, The University of Newcastle upon Tyne, Newcastle UK, NEI 7RU, [email protected]
A. G. O'neill
Affiliation:
Dept. Of Electrical and Electronic Engineering, The University of Newcastle upon Tyne, Newcastle UK, NEI 7RU, [email protected]
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Abstract

A simple mechanistic model of the oxidation of SiC is presented and analysed using Monte- Carlo simulation techniques. The model explains the observed anisotropic oxidation rate of SiC in terms of the effect of weakening/strengthening of Si-C bonds arising from the ongoing incorporation of highly electronegative oxygen atoms into the crystal lattice. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) from the Monte-Carlo simulations is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 135
Copyright
Copyright © Materials Research Society 1999

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References

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