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Oxidation Kinetics of Yba2Cu3OT7-x Thin Films in the Presence of Atomic Oxygen and Molecular Oxygen by In-Situ Resistivity Measurement

Published online by Cambridge University Press:  15 February 2011

K. Yamamoto ,
B. M. Lairson ,
J. C. Bravman  and
T. H. Geballe
K. Yamamoto
Affiliation:
Central Reserch Laboratories, Kanegafuchi Chemical Industry, Co. Ltd. 2-8-1-chome, Yoshida-cho, Hyogo-ku, Kobe652, Japan
B. M. Lairson
Affiliation:
Stanford University, Stanford CA94305
J. C. Bravman
Affiliation:
Stanford University, Stanford CA94305
T. H. Geballe
Affiliation:
Stanford University, Stanford CA94305
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Abstract

The kinetics of oxidation in Yba2Cu3O7-x thin films in the presence of molecular and atomic oxygen ambients have been studied. The resistivity of c-axis, a-axis, and mixed a+c axis oriented films, deposited in-situ by off-axis magnetron sputtering, was measured as a function of time subsequent to a change in the ambient conditions. The oxidation process is shown to be thermally activated and can be characterized by a diffusion model with an activation energy which varies from approximately 1.2eV in the presence of molecular oxygen to 0.6eV for a flux of 2×1015 oxygen atoms/cm2sec. In both cases, diffusivity is found to be insensitive to oxygen stoichiometry, but the rate of oxidation is found to be sensitive to the microstructure and orientation of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 333
Copyright
Copyright © Materials Research Society 1992

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