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Outgassing of Photoresist During Ion Implantation

Published online by Cambridge University Press:  25 February 2011

D. Roche ,
J.F. Michaud  and
M. Bruel
D. Roche
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
J.F. Michaud
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
M. Bruel
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
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Abstract

Outgassing of HUNT HPR 204 photoresist during ion implantation has been characterized by means of quadrupole mass analysis. The influence of the various parameters (implantation eneray, beam current, ion species) has been studied in order to point out the evolutions, in terms of time or implanted dose, of the target chamber pressure and the peaks at masses 26 and 28, characteristic of the photoresist outqassing. The pressure integral in the target chamber which is easily related to the integrated outgassing flux, has been found essentially dependent on the total energy deposited in the photoresist layer and on the ion penetration depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 203
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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