Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T01:56:29.772Z Has data issue: false hasContentIssue false
  • English
  • Français

OUM Nonvolatile Semiconductor Memory Technology Overview

Published online by Cambridge University Press:  01 February 2011

Stephen J. Hudgens
Stephen J. Hudgens*
Affiliation:
[email protected], Ovonyx Technologies, Inc., Research and Development, 1030 East El Camino Real, #276, Sunnyvale, CA, 94807, United States
Get access

Abstract

OUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs. OUM technology is based on an electrically initiated reversible amorphous to crystalline phase change process in multi-component chalcogenide alloy materials similar to those used in rewriteable optical disks. Fundamental processes in OUM devices, manufacturing technology, and progress towards commercialization of the technology will be reviewed.

Keywords

memoryamorphoussemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H05-01-G06-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lowrey, T.A., Hudgens, S.J., Czubatyj, W., Dennison, C.H., Kostylev, S.A., and Wicker, G.C., in Advanced Data Storage Materials and Characterization Techniques, edited by Ahner, J.W., Levy, J., Hesselink, L., and Mijiritskii, A. (Mater. Res. Soc. Symp. Proc 803, Warrendale PA, 2004) p. 101.Google Scholar
2. Oh, H.R., Cho, B.H., Cho, W.Y., Kang, S., Choi, B.G., Kim, H.J., Kim, K.S., Kim, D.E., Kwak, C.K., Byun, H.G., Jeong, G.T., Jeong, H.S., and Kim, K., IEEE J. Solid-State Circuits 41, 122 (2006).Google Scholar
3. Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In, and Moon, J.T., VLSI 2003, Kyoto, Japan, June, 12-14.Google Scholar
4. Chen, Y.C., Chen, H.P., Liao, Y.Y., Lin, H.T., Chou, L.H., Kuo, J.S., Chen, P.H., Lung, S.L. Liu, R., IEEE Custom Integrated Circuits Conference, San Jose, California, September 21-24, 2003.Google Scholar
5. Attenborough, K., Lankhorst, M.H.R., Ketelaars, W.S.M.M., Wolters, R.A.M., Baks, W., Delhougne, R., Gravesteijn, D.J., Jedma, F.J., Hulle, J.T. van, Castro, D. Tio, Widdershoven, F.P., and M.A., in 't Zandt, EPCOS-05 (2005).Google Scholar
6. Matsuzaki, N., Kurotsuchi, K., Matsui, Y., Tonomura, O., Yamamoto, N., Fujisaki, Y., Kitai, N., Takemura, R., Osada, K., Hanazawa, S., Moriya, H., Iwasaki, T., Kawahara, T., Takaura, N., Terao, M., Matsuoka, M., and Moniwa, M., IEDM-05.Google Scholar
7. Sendaker, S. and Wright, C.D., J. Appl. Phys 95, (2004) p. 504.Google Scholar
8. Lee, B.S., Abelson, J.R., Bishop, S.G., Kang, D.H., Cheong, B.K., and Kim, K.B., J. Appl. Phys. 97, 093509 (2005).Google Scholar
9. Pirovano, A., Lacaita, A., Merlani, D., Benvenuti, A., Pellizzer, F., and Bez, R., IEDM 2002.Google Scholar
10. Mott, N.F. and Davis, E.A., Electronic Process in Non-Crystalline Materials (Oxford University Press, 1971).Google Scholar
11. Cohen, M. H., Fritzsche, H., and Ovshinsky, S.R., Phys. Rev. Lett. 22, 1065 (1969)Google Scholar
12. Kastner, M., Adler, D., and Fritzsche, H., Phys. Rev. Lett. 37, 1504 (1976).Google Scholar
13. Ovshinsky, S.R., Phys Rev. Lett. 21, 1450 (1968).Google Scholar
14. Atwood, G. and Bez, R., IEEE NVSMW Technical Digest 2006 p.12.Google Scholar
15. Lai, S. and Lowrey, T., IEDM Technical Digest, pp. 36-5-1 through 36-5-3, (2001).Google Scholar
16. Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S., and Kim, Kinam, 2003 19th IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, February 26–30.Google Scholar
17. Maimon, J., Hunt, K. Rodgers, J., Burcin, L., and Knowles, K., Proc. NVMTS Conf. (2002).Google Scholar
18. Pellizer, F., Pirovano, A., Ottogalli, F., Magestretti, M., Scaravaggi, M., Zuliani, P., Tosi, M., Benvenuti, A., Besana, P., Cadeo, S., Marangon, T., Morandi, P., Piva, R., Spandre, A., Zonca, R., Modelli, A., Varesi, E., Lowrey, T., Lacaita, A., Casagrande, G., Cappelletti, P., and Bez, R., 2004 Symp.on VLSI Technol. Dig. Tech. Papers, p. 18 (2004).Google Scholar
19. Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U. In, and Moon, J.T., 2003 Symp. On VLSI Technol. Dig. Tech. Papers, p.176 (2003).Google Scholar
20. Wicker, G., SPIE 3891, 2-9, (1999).Google Scholar
21. Kang, D.H., Ahn, D.H., Kim, K.B., Webb, J.F., and Yi, K.W., J. Appl. Phys. 94, 3536 (2003).Google Scholar
22. Lacaita, A.L., Redaelli, A., Ielmini, D., Pellizzer, F., Pirovano, A., Benvenuti, A., and Bez, R., IEDM Technical Digest, 911, (2004).Google Scholar
23. Kim, S.S., Jhong, S.M., Lee, K.H., Park, Y.K., Kim, Y.T., Kong, J.T., and Lee, H.L., Japanese J. Appl. Phys. 44, 5943 (2005).Google Scholar
24. Giraud, V., Cluzel, J., Sousa, V., Jacquot, A., Dauscher, A., Scherrer, H., and Romer, S., J. Appl. Phys. 98, 13520 (2005).Google Scholar
25. Kim, S.B. and Wong, H.S. Philip, IEEE NVSMW Technical Digest, 92,(2006).Google Scholar
26. Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Hudgens, S., and Bez, R., IEDM Technical Digest, p. 29.6.1,(2003).Google Scholar
27. Lai, S., IEDM Technical Digest, p. 255,(2003).Google Scholar
28. Lai, S. and Lowrey, T., IEDM Technical Digest p. 36.5.1,(2001).Google Scholar
29. Pirovano, A., Radelli, A., Pellizzer, F., Ottogalli, F., Tosi, M., Ielmini, D., Lacaita, A.L., and Bez, R., IEEE Trans. On Device and Materials Reliability, 4, 422 (2004).Google Scholar
30. Kim, K. and Ahn, S.J., Proc. IEEE 43rd Annual International Reliability Phys. Symp. P. 157, (2005).Google Scholar
31. Redaelli, A., Ielmini, D., Lacaita, A.L., Pellizzer, F., Pirovano, A., and Bez, R., IEDM Technical Digest p. 742, (2005).Google Scholar
32. Bernacki, S., Hunt, K., Tyson, S., Hudgens, S., Pashmakov, B., and Czubatyj, W., IEEE Trans. On Nuclear Science, 47, 2528, (2000).Google Scholar
33. Maimon, J., Hunt, K., Rodgers, J., Burcin, L., and Knowles, K., Proc. NVMTS Conf. p. 1, (2003).Google Scholar