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Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Published online by Cambridge University Press:  17 March 2011

Zhi Chen ,
Jun Guo  and
Pangleen Ong
Zhi Chen
Affiliation:
Department of Electrical and Computer Engineering and Center for Micro-Magnetic and Electronic Devices, University of Kentucky, Lexington, KY 40506, U.S.A.
Jun Guo
Affiliation:
Department of Electrical and Computer Engineering and Center for Micro-Magnetic and Electronic Devices, University of Kentucky, Lexington, KY 40506, U.S.A.
Pangleen Ong
Affiliation:
Department of Electrical and Computer Engineering and Center for Micro-Magnetic and Electronic Devices, University of Kentucky, Lexington, KY 40506, U.S.A.
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Abstract

In order to verify Van de Walle and Jackson's theory on the isotope effect of the Si-H/D bonds resistant to hot-electron excitation [Appl. Phys. Lett., 69, 2441 (1996)], we measured the Si-H, Si-D, and other vibrational modes in oxidized silicon wafers annealed in hydrogen and deuterium using Fourier Transform Infrared (FTIR) spectrometry. Our FTIR data suggest that the frequency for the Si-D bending mode at the SiO2/Si interface is 490 cm−1. Our experimental data support Van de Walle and Jackson's theory with some modification. Their theory is correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope (STM) where no oxide is involved. In the SiO2/Si case, the de-excitation of the Si-D bond may be due to the energy coupling from the Si-D bending mode to two vibrational modes; i.e., the Si-O TO mode and the Si-Si TO phonon mode. Van de Walle and Jackson only pointed out coupling to the Si-Si TO phonon mode. The strongest coupling might happen between the Si-D mode and the Si-O TO mode. Therefore, the oxide may play a crucial role in energy dissipation of the Si-D bond in metal-oxide-semiconductor (MOS) devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H7.2
Copyright
Copyright © Materials Research Society 2004

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