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The Origin of Schottky Barriers on the Cleavage P1Lane of III–V Semiconductors: Review of Some Recent Theoretical Work
Published online by Cambridge University Press: 15 February 2011
Abstract
Recent theoretical ideas on the origin of the Schottky barrier on the cleavage plane of III–V semiconductors are reviewed, using the Al/GaAs(l10) system as a benchmark.
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- Research Article
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- Copyright © Materials Research Society 1982