Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:32:15.023Z Has data issue: false hasContentIssue false

Origin of In-Plane Texturing in Sputtered Mo Films

Published online by Cambridge University Press:  15 February 2011

A. K. Malhotra
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI 48109-2136, [email protected]
S. M. Yalisove
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI 48109-2136, [email protected]
J. C. Bilello
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI 48109-2136, [email protected]
Get access

Abstract

Sputtered Mo films with a thickness of 2μm or greater have been previously shown by xray and TEM studies to grow with strong in-plane and out-of-plane textures under dynamic deposition conditions. In this work, the geometric conditions and mechanisms causing preferential grain alignment in the plane of growth for sputtered Mo films, with a nominal thickness of 2μm, were explored. Four different deposition configurations, obtained by varying the parameters such as the deposition angle and the rotation speed of the substrates, were used in order to modify the texture as studied by x-ray and SEM techniques. While a [110] type out-of-plane texture was observed for all four deposition configurations, a (110) type in-plane texture, and the corresponding grain alignment in the plane of growth, was observed only when the flux of adatoms was hitting the substrates at an oblique angle. The texture characteristics and the microstructure of the Mo films, as analyzed using the pole figure x-ray and SEM techniques, were observed to be very similar for films deposited on three different substrates, namely the Si(100) and Ni3Al(321) single crystals, and laboratory grade glass slides. The in-plane texture development under oblique deposition conditions was proposed to be due to a combination of two mechanisms, namely the preferential resputtering of some of the grains normal to and in the plane of growth caused by the higher energy adatoms in the flux, followed by termination of the preferentially sputtered grains due to geometric shadowing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Penelle, R., Texture of Materials, edited by Gottstein, G. and Lticke, K. (New York, Springer, 1978), p. 129153.Google Scholar
2. Knorr, D.B., Tracy, D.P., and Robell, K.P., Appl. Phys. Lett. 59, p. 3241 (1991).Google Scholar
3. Campbell, A.N., Mikawa, R.E., and Knorr, D.B., J. Electron. Mater. 22, p. 589 (1993).Google Scholar
4. Itoh, K., Kamiya, M., Hara, K., Hashimoto, T., Okamoto, K., and, Fujiwara, H., Thin Solid Films 195, p. 245 (1991).Google Scholar
5. Yu, L.S., Harper, J.M.E., Cuomo, J.J., and Smith, D.A., Appl. Phys. Lett. 47 #9, p. 932 (1985).Google Scholar
6. Karpenko, O.P., Bilello, J.C., and Yalisove, S.M., J. Appl. Phys. 76 #8, p. 4610 (1994).Google Scholar
7. Sonnenberg, N., Longo, A.S., Cima, M.J., Chang, B.P., Ressler, K.G., McIntyre, P.C., and Liu, Y.P., J. Appl. Phys. 74 #2, p. 1027 (1993).Google Scholar
8. Bradley, R.M., Harper, J.M.E., and Smith, D.A., J. Appl. Phys. 71, p. 4160 (1986).Google Scholar
9. Schultz, L.G., J. Appl. Phys. 20, p. 1030 (1949).Google Scholar
10. Barrett, C.S. and Massalski, T.B., Structure of Metals, (McGraw-Hill, New York, 1966), p. 541567.Google Scholar
11. Equations and Software for the pole figure analysis was provided by Rigaku (Manual No. ME201RE).Google Scholar
12. Smith, R.W. and Srolovitz, D.J., manuscript submitted in Appl. Phys. Letters.Google Scholar
13. Dirks, A.G. and Leamy, H.J., Thin Solid Films 47, p. 219 (1977).Google Scholar