Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T22:48:16.010Z Has data issue: false hasContentIssue false

The Origin of Anomalous Strain in Thin Sputtered Mo Films on Si(100)

Published online by Cambridge University Press:  22 February 2011

J. Tao
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
D. Adams
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
S. M. Yalisove
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
J. C. Bilello
Affiliation:
Department of Materials Science & Engineering, University of Michigan, Ann Arbor, MI, 48109–2136, U.S.A.
Get access

Abstract

Stress and structure evolution in thin films of sputtered Mo on Si(100) substrates has been studied, as a function of microstructure, by x-ray diffraction, transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). Double crystal x-ray diffraction topography (DCDT) has been employed to determine film stress as a function of thickness. High compressive stress, about 1000 MPa, is found for the thinnest Mo film. With increasing film thickness a minimal residual stress level is reached. Low incidence angle x-ray diffraction patterns indicated that crystalline Mo is present even in the thinnest films. Line broadening of the Mo(l10) diffraction peak has shown that the grain dimension is comparable to the film thickness over the range studied. Plan view TEM observations of films less than 20nm demonstrated the presence of continuous film with grain dimensions on the order of film thickness, in good agreement with the x-ray results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kuo, C.L., Emamian, M. and Bilello, J. C., Rev. Sci. Inst., 55, 107, (1984).Google Scholar
2. Kuo, C. L., Vanier, P. E. and Bilello, J. C., J. Appl. Phys., 55, 275, (1984).Google Scholar
3. Tao, J., Lee, L. H. and Bilello, J. C., Jour. Elec. Mater., 20, 819, (1991).CrossRefGoogle Scholar
4. Cullity, B. D., Elements of X-ray Diffraction, (Addison-Wesley Pub. Co., Reading, Ma, 1978).Google Scholar
5. Wagner, C. N. J., Boldrick, M. S. and Keller, L., Adv. X-rav Analysis, 31, 129, (1989).Google Scholar
6. Renninger, M., Phys. Lett., 1, 104, (1962).CrossRefGoogle Scholar
7. Renninger, M., Z. Phys., l, 20, (1965).Google Scholar
8. Stoney, G. G., Proc. Roy. Soc. Ser A82. 172, (1909).Google Scholar
9. Hoffman, D. W., in Physics of Thin Films, eds. Haas, G. and Thun, R. E., Academic Press - New York, Vol. 3, (1965), p. 211.Google Scholar
10. Darwin, C. G., Phil. Mag., 27, 315, 657 (1914);Google Scholar
Darwin, C. G., Phil. Mag., 41, 800 (1922)Google Scholar
11. Warren, B. E. X-Rav Diffraction, (Addison-Wesley Pub. Co. Reading, MA, 1969).Google Scholar