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Oriented Si and Ge Nanocrystals Formed in Al2O3 by Ion Implantation and Annealing

Published online by Cambridge University Press:  22 February 2011

C.W. White ,
J.D. Budai ,
S.P. Withrow ,
S.J. Pennycook ,
D.M. Hembree ,
D.S. Zhou ,
T. Vo-Dinh  and
R.H. Magruder
C.W. White
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
J.D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
S.P. Withrow
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
S.J. Pennycook
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
D.M. Hembree
Affiliation:
Oak Ridge Y-12 Plant, P. O. Box 2009, Oak Ridge, Tennessee 37831
D.S. Zhou
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
T. Vo-Dinh
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
R.H. Magruder
Affiliation:
Vanderbilt University, Nashville, Tennessee
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Abstract

Ion implantation followed by thermal annealing in a reducing atmosphere has been used to create a high density of oriented Si and Ge nanocrystals in (0001) AI2O3. Both types of nanocrystals are three-dimensionally aligned with respect to the AI2O3 matrix, but the orientational relationships are different, and the two types of nanocrystals have different shapes in AI2O3. Implantation of Si and Ge in fused silica also produces nanocrystals, but in this case, the nanocrystals are randomly oriented relative to each other.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 487
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Iyer, S.S. and Xie, Y.H., Science 260, 40 (1993).Google Scholar
2 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
3 Letmann, V. and Gösel, U., Appl. Phys. Lett. 58, 856 (1991).Google Scholar
4 Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A., and Nakagiri, T., Appl. Phys. Lett. 56, 2379 (1990).Google Scholar
5 Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., and Masumoto, Y., Appl. Phys. Lett. 59, 3168(1991).Google Scholar
6 Saunders, W.A. et al. , Appl. Phys. Lett. 63, 1549 (1993).Google Scholar
7 Paine, D.C., Caragianis, C., and Shigesato, Y., Appl. Phys. Lett. 60, 2886 (1992).Google Scholar
8 Sklad, P.S., McHargue, C.J., White, C.W., and Farlow, G.C., J. Mat. Sci. 27, 5895 (1992).Google Scholar
9 Farlow, G.C., Sklad, P.S., White, C.W., and McHargue, C.J., J. Mat. Res. 5, 1502 (1990).Google Scholar
10 White, C.W., McHargue, C.J., Sklad, P.S., Boatner, L.A., and Farlow, G.C., Mat. Sci. Reports 4, 43 (1989).Google Scholar
11 Ohkubo, M. and Suzuki, N., Phil. Mag. Lett. 57, 261 (1988).Google Scholar
12 Ohkubo, M., Hioki, T., and Kawamoto, J., J. Appl. Phys. 60, 1325 (1986).Google Scholar
13 Ohkubo, M., Hioki, T., Suzuki, N., Ishiguro, T., and Kawamoto, J., Nucl. Inst. & Methods B 39, 675(1989).Google Scholar
14 Ramabadran, U.B., Jackson, H.E., and Farlow, G.C., Appl. Phys. Lett. 55, 1199 (1989).Google Scholar