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Oriented Film Growth of Organic Semiconductor Sexithiophene on Artificial Periodic Grooves and Electrical Conduction Properties of the Films
Published online by Cambridge University Press: 01 February 2011
Abstract
Film growth of organic semiconductor α-sexithiophene (6T) was studied using substrates with artificial periodic grooves. The grooves were fabricated on thermally oxidized silicon substrates by electron beam lithography. Based on the orientation analysis by atomic force microscopy and grazing-incidence x-ray diffraction, part of the 6T grains grew having the in-plane orientational relationship with the artificial grooves. This phenomenon corresponds to “ggraphoepitaxy” which has been well known in inorganic materials research field. As well as the in-plane preferred orientation, one-dimensional structure consisting of connected 6T grains was observed. The electrical conduction properties of the films were also evaluated.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1059: Symposium KK – Nanoscale Pattern Formation , 2007 , 1059-KK11-11
- Copyright
- Copyright © Materials Research Society 2008
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