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Orientation Effects on Pyroelectric Properties of Solution - Derived Bismuth Titanate Films

Published online by Cambridge University Press:  10 February 2011

Tran D. Khang  and
Relva C. Buchanan
Tran D. Khang
Affiliation:
Department of Materials Science and Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012, USA.
Relva C. Buchanan
Affiliation:
Department of Materials Science and Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012, USA.
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Abstract

Ferroelectric bismuth titanate (Bi4Ti3O12) thin films with controlled degree of c-orientation were fabricated on Pt/Si substrate by solution spin-casting technique. The degree of c-orientation of the films was characterized by XRD analysis and Raman spectroscopy. Film properties such as dielectric constant, dielectric loss factor, spontaneous polarization, and coercive field varied over the range of (119–87), (0.04–0.015), (8–4 μC/cm2), and (30-20 kV/cm), respectively as the degree of c- orientation of the films increased from 0.3 to 0.85. Values for the pyroelectric coefficient, voltage responsivity, and voltage figure of merit were also evaluated. These properties exhibited strong dependence on the degree of c-orientation of the films and, for highly oriented films, reached values of 9.5 nC/°C. cm2, 62 V/W, and 0.4×10−10 C. cm/J, respectively. The inter-correlation between degree of c-orientation, grain morphology, and pyroelectric properties of the films were explored in this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 509
Copyright
Copyright © Materials Research Society 1998

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