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Organometallic Vapor Phase Epitaxial Growth of ZnGeAs2 and (ZnGeAs2)xGe1−x on GaAs

Published online by Cambridge University Press:  26 February 2011

G. S. Solomon ,
J. B. Posthill  and
M. L. Timmons
G. S. Solomon
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
M. L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

Epitaxial single crystal (001) chalcopyrite-structure ZnGeAs2 and single crystal (100) zinc blende-structure (ZnGeAs2)xGe1−x alloys have been grown by organometallic vapor phase epitaxy on (100) GaAs. Selected area electron diffraction was used to determine the crystal structure for several Zn:Ge molar flow ratios. Bulk chemical composition was determined by electron microprobe and correlated to crystal lattice constants obtained from x-ray diffraction. Due to the lattice mismatch between chalcopyrite-structure ZnGeAs2 and the GaAs substrate, the epitaxy is elastically strained, compressing the a-lattice constant and elongating the c-lattice constant. Optical absorption and transmission spectroscopy indicate the zinc-blende-structure material has an indirect band gap of approximately 0.6 eV, whereas the chalcopyrite ZnGeAs2 has a direct band gap of 1.15 eV. Secondary ion mass spectroscopy reveals significant Zn diffusion into the GaAs substrate if the Zn:Ge molar flow ratio exceeds the ratio required for stoichiometric chalcopyrite-structure crystal growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 61
Copyright
Copyright © Materials Research Society 1989

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References

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