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Organometallic Precursors for III-V Semiconductors

Published online by Cambridge University Press:  25 February 2011

Erin K. Byrne ,
Trevor Douglas  and
Klaus H. Theopold
Erin K. Byrne
Affiliation:
Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, New York 14853
Trevor Douglas
Affiliation:
Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, New York 14853
Klaus H. Theopold
Affiliation:
Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, New York 14853
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Abstract

Organometallic molecules containing covalently linked gallium and arsenic or indium and phosphorus have been synthesized and characterized spectroscopically and by X-ray diffraction. These precursors can be transformed into the corresponding III-V materials in a chemical reaction proceeding at ambient temperature. The compound semiconductors prepared in this way are obtained as amorphous powders. During the reaction, quantum size effects may be observed by UV-VIS spectroscopy as the particles grow.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 59
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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