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Organic Thin-Film-Transistors with High on/off Ratios

Published online by Cambridge University Press:  15 February 2011

L. Torsi ,
A. Dodabalapur ,
H. E. Katz ,
A. J. Lovinger  and
R. Ruel
L. Torsi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
A. Dodabalapur
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
H. E. Katz
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
A. J. Lovinger
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
R. Ruel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill NJ 07974
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Abstract

In this article a new procedure to obtain alpha-hexathienylene (α-6T) thin-film-transistors (TFTs) with on/off ratios in excess of one million is reported. This procedure involves subjecting the TFTs to rapid thermal annealing. Previously, high on/off ratios have been achieved with improved device design and better chemical synthesis of α-6T oligomers. High on/off ratios, along with a switching time of ∼ 10 μs, render α-6T TFTs potential candidates as switching devices in active matrix displays. The experimental current-voltage (I-V) characteristics of oc-6T TFTs with channel length L = 4μm are also presented and a measured field effect mobility of 0.02 cm2/V-s is extracted from these characteristics using an analytical model which we have developed for short-channel α-6T TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 695
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Garnier, F., Hajlaoui, R., Yassar, A. and Srivastava, P., Science 265, 1684 (1994).Google Scholar
2. Tang, C. W., Van Slyke, S.A., and Chen, C.H., J. Appl. Phys. 65, 3610 (1989)Google Scholar
3. Dodabalapur, A., Torsi, L., and Katz, H.E., Science, 14 April 1995.Google Scholar
4. Lovinger, A. J., Davis, D.D., Ruel, R., Torsi, L., Dodabalapur, A., and Katz, H. E., J. Mat. Res. (submitted)Google Scholar
5. Katz, H.E., Dodabalapur, A., Torsi, L., Lovinger, A.J. and Ruel, R., ACS Polym. Mater. Sci. Eng. 72, 467 (1995).Google Scholar
6. Torsi, L., Dodabalapur, A. and Katz, H.E., to be published in J. Appl. Phys. (July 1995)Google Scholar
7. Torsi, L., Dodabalapur, A., Lovinger, A.J., Ruel, R., Katz, H.E. and Baldwin, K.W., work in progressGoogle Scholar