Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T15:51:43.282Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic field-effect transistors with bending radius down to 1 mm

Published online by Cambridge University Press:  17 March 2011

Tsuyoshi Sekitani ,
Hiroshi Kawaguchi ,
Takayasu Sakurai  and
Takao Someya
Tsuyoshi Sekitani
Affiliation:
Quantum-Phase Electronics Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Hiroshi Kawaguchi
Affiliation:
Center of Collaborative Research, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
Takayasu Sakurai
Affiliation:
Center of Collaborative Research, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
Takao Someya
Affiliation:
Quantum-Phase Electronics Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Get access

Abstract

We have investigated the allowed bending radius of high-quality pentacene field-effect transistors (OFETs) manufactured on a plastic substrate of a polyethylenenaphthalate (PEN) film with a polyimide gate dielectric layer. It is found that the reduction of mobility due to the application of an expansive stress with a radius of curvature (R) smaller than about 1 mm, was only 20 %. Furthermore, the mobility increase by 7 % to 0.28 cm2/Vs on a compressive stress with R=4.6 mm. We also studied the recovery performance after stressing OFETs. No significant change and residual effect in performance has been found after the removal of the compressive bending the device down to a radius of 4.6 mm (1.4 ± 0.1 % in strain). In the analysis of the mechanical flexibility, we demonstrated that our OFETs electrical properties were fairly stable during the application of an expansive and compressive stress down to several mm in bending radius.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I5.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refences

[1] Baude, P. F., Ender, D. A., Haase, M. A., Kelley, T. W., Muyres, D. V., and Theiss, S. D., Appl. Phys. Lett. 82, 3964 (2003).Google Scholar
[2] Drury, C. J., Mutsaers, C. M. J., Hart, C. M., Matters, M., and Leeuw, D. M. de, Appl. Phys. Lett. 73, 108 (1998).Google Scholar
[3] Rogers, J. A., Bao, Z., Baldwin, K., Dodabalapur, A., Crone, B., Raju, V. R., Kuck, V., Katz, H., Amundson, K., Ewing, J., and Drzaic, P., Proc. Natl. Acad. Sci. U.S.A. 98, 4835 (2001).Google Scholar
[4] Kato, Y., Iba, S., Teramoto, R., Sekitani, T., and Someya, T., Appl. Phys. Lett. 84, 3789 (2004).Google Scholar
[5] The mobility of OFETs deposited on 900 nm polyimide gate dielectric layers, we used in this experiment, is relatively low compared with those on 540 nm polyimide layers of ∼1.4 cm2/Vs. Actually, the mobility is strongly enhanced with decreasing the thickness of polyimide gate dielectric layers. The details explanation was described in ref. 4.Google Scholar
[6] Someya, T. and Sakurai, T., 2003 IEEE International Electron Devices Meeting (IEDM 2003), Washington D.C., December 8-10, 2003.Google Scholar
[7] Someya, T., Kawaguchi, H., and Sakurai, T., 2004 IEEE International Solid-State Circuits Conference (ISSCC 2004), San Francisco, CA, February 14- 19, 2004.Google Scholar