Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:41:43.634Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic Field Effect Transistors Having Hundreds of Nanometers Long Channels

Published online by Cambridge University Press:  01 February 2011

Liwei Shang ,
Ming Liu ,
Deyu Tu ,
Lijuan Zhen ,
Ge Liu  and
Xinghua Liu
Liwei Shang
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Lab of Nanofabrication and Novel device Integration, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, AL, 100029, China, People's Republic of
Ming Liu
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Nanofabrication and Novel Devices Integration Technology, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, 100029, China, People's Republic of
Deyu Tu
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Nanofabrication and Novel Devices Integration Technology, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, 100029, China, People's Republic of
Lijuan Zhen
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Nanofabrication and Novel Devices Integration Technology, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, 100029, China, People's Republic of
Ge Liu
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Nanofabrication and Novel Devices Integration Technology, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, 100029, China, People's Republic of
Xinghua Liu
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Key Laboratory of Nanofabrication and Novel Devices Integration Technology, No.3, West road of Beitucheng, Chaoyang Disctrict, Beijing, 100029, China, People's Republic of
Get access

Abstract

This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10−2 cm2/Vs into 10m5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size.

Keywords

nanoscaleorganicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA07-80
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dodabalapur, A., Torsi, L., and Katz, H. E. Science 268, 270 (1995)Google Scholar
2. Jones, E. T. Chyan, O. M. and Wrighton, M. S. J. Am. Chem. Soc., 109, 5526 (1987)Google Scholar
3. Franssila, S., Paloheimo, J. and Kuivalainen, P., IEEE Electronics Letters 29, 713 (1993)Google Scholar
4. Rogers, J. A. Dodabalapur, A., Bao, Z., and Katz, H. E. Appl. Phys. Lett., 75, 1010 (1999)Google Scholar
5. Granstrom, E. L. and Frisbie, C. D. J. Phys. Chem. B, 104, 12202 (2000)Google Scholar
6. Collet, J., Tharaud, O., Chapoton, A., and Vuillaume, D., Appl. Phys. Lett., 76, 1941 (2000)Google Scholar
7. Austin, M. D. Chou, S. Y. Appl. Phys. Lett. 81, 4431 (2002)Google Scholar
8. Zhang, Y., Petta, J.R. Ambily, S., Shen, Y., Ralph, D. C. and Malliaras, G. G. Adv. Mater. 15, 1632 (2003)Google Scholar
9. Zaumseil, J., Someya, T., Bao, Z., Loo, Y., Cirelli, R., and Rogers, J. A. Appl. Phys. Lett., 82, 793 (2003)Google Scholar
10. Stutzmann, N., Friend, R. H. and Sirringhaus, H., SCIENCE 299 21 1881 (2003)Google Scholar
11. Kam, A.P. Seekamp, J., Solovyev, V., Clavijo, C. Cedeno, Goldschmidt, A., Torres, C.M.S. Microelectronic Engineering 73–74, 809 (2004)Google Scholar
12. Leising, G., Stadlober, B., Haas, U., Haase, A., Palfinger, C., Gold, H., and Jakopic, G., Microelectronic Engineering, 83, 831 (2006)Google Scholar
13. Jung, T., Yoo, B., Wang, L., and Dodabalapur, A., Jones, B. A. Facchetti, A., Wasielewski, M. R. and Marks, T. J. Appl. Phys. Lett. 88, 183102 (2006)Google Scholar
14. Kyser, D. F. Viswanathan, N. S. J. Vac. Sci. Technol. B, 12, 1305 (1975)Google Scholar
15. Ofuji, M., Ishikawa, K., Takezoe, H., Inaba, K. and Omote, K., Appl. Phys. Lett. 86, 062114 (2005)Google Scholar