Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-20T03:26:27.382Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

D. Imafuku ,
W. Mizubayashi ,
S. Miyazaki ,
M. Hirose ,
Y. Wakayama  and
S. Kobayashi
D. Imafuku
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
W. Mizubayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Y. Wakayama
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Kobayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Get access

Abstract

Organic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 161
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lee, S. H., Cho, B. J., Kim, J. C. and Choi, S. H., IEDM Tech. Dig. (San Francisco, 1994) 605.Google Scholar
[2] Okada, K., Kawasaki, S. and Hirofuji, Y., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials. (Yokohama, 1994) 565.Google Scholar
[3] Yoshida, T., Miyazaki, S. and Hirose, M., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials, (Yokohama, 1996) 539.Google Scholar
[4] Sugino, R., Nakanishi, T., Takasaki, K. and Ito, T., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials, (Osaka, 1995) 920.Google Scholar
[5] Yoshida, T., Imafuku, D., Alay, J. L., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys., 34 (1995) L903.Google Scholar
[6] Depas, M., Vermeire, B., Mertens, P. W., Meuris, M. and Heyns, M. M., 1994 Symp. on VLSI Technology, Digest of Tech. Papers., (1994) 23.Google Scholar
[7] Hasegawa, E., Ishitani, A., Akimoto, K., Tsukiji, M. and Ohta, N., J. Electrochem. Soc. 142 (1995) 273.Google Scholar
[8] Yoshida, T., Imafuku, D., Miyazaki, S. and Hirose, M., Proc. of 3rd Item. Symp. on Ultra Clean Processing of Silicon Surfaces (Antwerp, 1996) to be published.Google Scholar