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Organic CMOS Technology Based on Interface Doped Pentacene

Published online by Cambridge University Press:  01 February 2011

Marcus Ahles ,
Roland Schmechel  and
Heinz von Seggern
Marcus Ahles
Affiliation:
Institute of Materials Science, Darmstadt University of Technology, Petersenstraße 23, 64287 Darmstadt, Germany
Roland Schmechel
Affiliation:
Institute of Materials Science, Darmstadt University of Technology, Petersenstraße 23, 64287 Darmstadt, Germany
Heinz von Seggern
Affiliation:
Institute of Materials Science, Darmstadt University of Technology, Petersenstraße 23, 64287 Darmstadt, Germany
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Abstract

An organic complementary-metal-oxide-semiconductor (CMOS) inverter based on pentacene acting as both n- and p-type organic semiconductor is presented. The circuit consists of two spatially separated transistors which are realized within one continuous pentacene layer. Both transistors act exclusively in unipolar mode with electron and hole mobilities of 0.11 cm2V-1s-1 and 0.10 cm2V-1s-1, respectively. In the domain of the n-channel, electron accumulation in the pentacene is enabled by deposition of traces of calcium acting as electron donator. The CMOS inverter works reliably within the range of the supply voltage (60 V) with a gain in between 17 and 24 which is among the highest values observed in organic systems. Nevertheless, the circuit shows hysteresis, which is explained by a gate voltage depending trap occupation in the n-channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I4.10
Copyright
Copyright © Materials Research Society 2005

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