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Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering

Published online by Cambridge University Press:  13 September 2011

Jens Bauer ,
Michael Weise ,
Chinmay Khare  and
Bernd Rauschenbach
Jens Bauer
Affiliation:
Leibniz Institute of Surface Modification, Leipzig, Germany
Michael Weise
Affiliation:
Leibniz Institute of Surface Modification, Leipzig, Germany
Chinmay Khare
Affiliation:
Leibniz Institute of Surface Modification, Leipzig, Germany
Bernd Rauschenbach
Affiliation:
Leibniz Institute of Surface Modification, Leipzig, Germany
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Abstract

Glancing angle deposition (GLAD) was used to deposit ordered arrangements of Si/Ge-nanocolumns applying the ion beam sputter technique. After substrate preparation by electron beam lithography as well as nanosphere lithography the deposition behavior of GLAD nanocolumns in regular arrangements with different symmetries was studied. The nanocolumns exhibited distinct morphology regions which are correlated to their temporal evolution during deposition. Furthermore, the customization of the column morphology by non-uniform substrate rotation is considered. Axial Si/Ge-heterojunctions were incorporated by sequential deposition.

Keywords

semiconductingnanostructuresputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1329: Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices , 2011 , mrss11-1329-i01-01
Copyright
Copyright © Materials Research Society 2011

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References

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