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Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

Published online by Cambridge University Press:  21 February 2011

Y.M. Li ,
I. An ,
M. Gunes ,
R.M. Dawson ,
R.W. Collins  and
C.R. Wronski
Y.M. Li
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
I. An
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
M. Gunes
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
R.M. Dawson
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
R.W. Collins
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

We have studied a-Si:H prepared by alternating plasma deposition with atomic H treatments performed with a heated W filament. Real time spectroscopie ellipsometry provides the evolution of film thickness, optical gap, and a measure of the fraction of Si-Si bonds broken in the near-surface (200 Å) during H-exposure of single films. This information guided us to the desired parameters for the H-treatments. Here, we concentrate on a weak hydrogenation regime characterized by minimal etching, a higher H content by 2 at.%, and a larger optical gap by 0.02 eV for the growth/hydrogenation structures in comparison to continuously deposited control samples. This new material has shown an improvement in the defect density in the light-soaked state in comparison to the control samples. This may result from stabilization of the Si structure due to an increase in the H chemical potential in the a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 57
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] See for example, Stafford, B. L. and Sabisky, E. eds. Stability of Amorphous Silicon Alloy Materials and Devices, AIP Conf. Proc. No. 157 (AIP, New York, 1987).Google Scholar
[2] An, I., Li, Y.M., Wronski, C. R., and Collins, R. W., this Volume.Google Scholar
[3] Pankove, J. I., Lampert, M. A., and Tarng, M. L., Appl. Phys. Lett. 32, 439 (1978).CrossRefGoogle Scholar
[4] An, I. and Collins, R. W., Rev. Sci. Instrum. 62, 1904 (1991).CrossRefGoogle Scholar
[5] Street, R. A., Phys. Rev. B 43, 2454 (1991).CrossRefGoogle Scholar
[6] Cody, G.D., in Semiconductors and Semimetals, Vol. 21, Part B, edited by Pankove, J.I. (Academic, New York, 1984), p. 11.Google Scholar
[7] Lee, S., Gunes, M., Wronski, C. R., Maley, N., and Bennett, M., Appl. Phys. Lett. 59, 1578 (1991).CrossRefGoogle Scholar
[8] Amer, N. M. and Jackson, W. B., in ref. [6], p. 83.Google Scholar
[9] Mott, N. F., Adv. Phys. 16, 49 (1967).CrossRefGoogle Scholar
[10] Chang, K. J. and Chadi, D. J., Phys. Rev. Lett. 62, 937 (1989).CrossRefGoogle Scholar
[11] Jackson, W. B., Phys. Rev. B 41, 10257 (1990).CrossRefGoogle Scholar
[12] Das, D., Shirai, H., Hanna, J., and Shimizu, I., Jpn. J. Appl. Phys. 30, L239 (1991).CrossRefGoogle Scholar
[13] Johnson, N. M., Nebel, C. E., Santos, P. V., Jackson, W. B., Street, R. A., Stevens, K. S., and Walker, J., Appl. Phys. Lett. 59, 1443 (1991).CrossRefGoogle Scholar