Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T06:28:41.394Z Has data issue: false hasContentIssue false
  • English
  • Français

Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

Published online by Cambridge University Press:  21 February 2011

Y. Okada ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
Get access

Abstract

Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The optical absorption and the electrical conductivity of these films were studied. With increasing hydrogen content in the films, the dark conductivity decreases strongly and the activation of the conductivity increases. We explain the conductivity qualitatively in terms of a grain boundary model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 15
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsuda, A., Yamasaki, S., Nakayama, K., Okushi, H., Tanaka, K., Iizima, S., Matsumura, M. and Yamamoto, H., Jpn. J. Appl. Phys. 19, L305 (1980)Google Scholar
2. Matsuda, A., Matsumura, M. Yamasaki, S., and Yamamoto, H., Imura, T., Okushi, H., Iizima, S. and Tanaka, K., Jpn. J. Appl. Phys. 20, L183 (1981)Google Scholar
3. Richter, H. and Ley, L., J. Appl. Phys. 52, 7281 (1981)Google Scholar
4. Furukawa, S. and Miyasato, T., Phys. Rev. B33, 5726 (1988)Google Scholar
5. Guimaraes, J. L., Martins, R., Fortunato, E., Ferreira, I., Santos, M. and Garvalho, N., Mat. Res. Soc. Symp. Proc. 118, 617 (1988)Google Scholar
6. Martins, R., Vieira, M., Fortunato, E., Santos, M., Ferreira, I., Lavado, M. and Guimaraes, L., Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, p35, Yorktown Hights, New York, Nov. 21-23, 1988 Google Scholar
7. Matsumura, M., Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, p 115, Yorktown Hights, New York, Nov. 21-23, 1988 Google Scholar
8. Essick, J. M. and Cohen, J. D., Appl. Phys. Lett. 55, 1232 (1989)Google Scholar
9. Fujiioka, H., Deguchi, T., Takazaki, K. and Takada, T., IEDM Tech. Dig., p574 (1988)Google Scholar
10. Sasaki, K., Fukuzawa, T. and Furukawa, S., IEDM Tech. Dig., p186 (1987)Google Scholar
11. LeComber, P. G., Willeke, G. and Spear, W. E., J. Non-cryst. Solids 59&60, 759 (1983)Google Scholar
12. Seto, J. Y. W., J. Appl. Phys. 46, 5247 (1975)Google Scholar
13. Baccarani, G., Ricco, B. and Spadini, G., J. Appl. Phys. 49, 5565 (1978)Google Scholar
14. Mishima, Y., Miyazaki, S., Hirose, M. and Osaka, Y., Phil. Mag. B46, 1 (1982)Google Scholar
15. Komura, S., Aoyagi, Y., Segawa, Y., Namba, S., Matsuyama, A., Matsuda, A. and Tanaka, K., J. Appl. Phys. 56, 1658 (1984)Google Scholar
16. Konuma, M., Curtins, H., Sarott, F.-A. and Veprek, S., Phil. Mag. B55, 377 (1987)Google Scholar
17. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I., Jpn. J. Appl. Phys. 26, L10 (1987)Google Scholar
18. Tanabe, H., Azuma, M., Uematsu, T., Shirai, H., Hanna, J., Shimizu, I., Mar. Res. Soc. Symp. Proc. 149, 17 (1989)Google Scholar
19. Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M. and Wagner, S., Mar. Res. Soc. Symp. Proc. 149, 93 (1989)Google Scholar
20. Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M. and Wagner, S., J. Appl. Phys., February 1990 Google Scholar
21. Slobodin, D., Alijishi, S., Schwarz, R. and Wagner, S., Mat. Res. Soc. Symp. Proc. 49, 153 (1985)Google Scholar
22. Fang, C. J., Gruntz, K. J., Ley, L. and Cardona, M., J. Non-Cryst. Solids 32, 405 (1979)Google Scholar
23. Campbell, I. H. and Fauchet, P. M., Solid State Comm. 58, 739 (1986)Google Scholar
24. Fauchet, P. M. and Campbell, I. H., CRC Crit. Rev. Solid State Mat. Sci. 14, S79 (1988)Google Scholar
25. “Handbook of Optical Constants of Solids”, ed. by Palik, E. D., Academic Press, New York, 1985 Google Scholar