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Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism

Published online by Cambridge University Press:  28 February 2011

N. Koshida ,
H. Koyama ,
T. Ozaki ,
M. Araki ,
T. Oguro  and
H. Mizuno
N. Koshida
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
H. Koyama
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
T. Ozaki
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
M. Araki
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
T. Oguro
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
H. Mizuno
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
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Abstract

Some optoelectronic effects in porous Si (PS) have been investigated in relation to the visible luminescence mechanism. As regards photoluminescence (PL), particular emphasis is placed on the relationship between photoconduction (PC) and PL excitation (PLE) spectra, the interaction of external electric field and PL emission, and polarization properties of PL Main subjects of electroluminescence (EL) studies reported here are the dynamic behavior of EL operation and the formation of a large-area contact by a conducting polymer (polypyrrole: PP). The observed experimental results (almost complete coincidence of PC spectra with PLE ones, linear polarization memory of PL definite correlation between the polarization degree and the PL efficiency, and comparable response time of electrical PL quenching and EL to the PL decay time) are consistent with our hypothesis that the major process of PL takes place within Si nanocrystallites. The electrical characterization of light-emitting PS diodes with PP contacts ensures the usefulness of the contact formation by electropolymerization as a technique for uniform and efficient carrier injection into PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 695
Copyright
Copyright © Materials Research Society 1995

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References

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