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Optimizing Fabrication of Buried Oxide Channel Field Effect Transistors
Published online by Cambridge University Press: 10 February 2011
Abstract
In this paper we describe improved methods of fabrication for an oxide channel field effect transistor (OxFET) similar in architecture to a conventional FET. We demonstrate that a substrate treatment consisting of a low power oxygen ashing followed by annealing yields a strontium (A-site) terminated surface in single-crystal strontium titanate (STO). This surface termination of the substrate results in pulsed laser deposited cuprate-channel films of improved quality.
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- Copyright © Materials Research Society 2000
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