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Optimized Molecular Beam Epitaxy Structures for GaAs on Silicon Photodetectors
Published online by Cambridge University Press: 21 February 2011
Abstract
Two dimensional growth of GaAs on silicon has been achieved by modulation molecular beam epitaxy (where the arsenic beam is pulsed) with laser assistance at 308 nm (LAMBE). Photoconductive, low doping concentration layers were utilized for metal-semiconductormetal photodetectors which were evaluated at 840 nm.
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