Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:07:30.394Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of the protocrystalline p-layer in a-Si:H-based n-i-p photodiodes

Published online by Cambridge University Press:  21 July 2014

Y. Vygranenko ,
M. Fernandes ,
M. Vieira  and
A. Sazonov
Y. Vygranenko
Affiliation:
Electronics, Telecommunications and Computer Engineering, ISEL, Lisbon, 1950-062, Portugal CTS-UNINOVA, Quinta da Torre, 2829-516, Caparica, Portugal
M. Fernandes
Affiliation:
Electronics, Telecommunications and Computer Engineering, ISEL, Lisbon, 1950-062, Portugal CTS-UNINOVA, Quinta da Torre, 2829-516, Caparica, Portugal
M. Vieira
Affiliation:
Electronics, Telecommunications and Computer Engineering, ISEL, Lisbon, 1950-062, Portugal CTS-UNINOVA, Quinta da Torre, 2829-516, Caparica, Portugal
A. Sazonov
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, N2L 3G1, Canada
Get access

Abstract

This work reports a carbon-free, blue-enhanced a-Si:H n-i-p photodiode with an optimized protocrystalline p-layer. Although the used deposition conditions for the p-layer correspond to the microcrystalline regime, thin layers are mostly protocrystalline due to the amorphous underlying undoped layer. This conclusion is supported by Raman spectroscopy measurements. We have also found that the optical band gap of the p-layer can be varied by adjusting the rf power. By widening the band gap and tuning the impurity concentration in the p-layer, absorption and recombination losses at the p-i interface were reduced. The current-voltage, capacitance-voltage, and spectral-response characteristics of fabricated photodiodes are correlated with the doping level, optical band gap, and deposition conditions for p-layers. The optimized device exhibits a leakage current of about ∼80 pA/cm2 at 5 V reverse bias. The external quantum efficiency reaches a peak value of 92% at a wavelength of 510 nm, and, at shorter wavelengths, decreases down to 66%@400nm.

Keywords

plasma-enhanced CVD (PECVD) (deposition)thin filmdevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a12-06
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Street, R. A., Ed., Technology and Applications of Amorphous Silicon (Berlin: Springer-Verlag, 2000).CrossRefGoogle Scholar
Beutel, J., Kundel, H. L., and Van Metter, R., Eds., Handbook of Medical Imaging, (Washington, DC.: SPIE Press, 2000).Google Scholar
Stiebig, H., Siebke, F., Beyer, W., Beneking, C., Rech, B., and Wagner, H., Sol. Energy Mater. Sol. Cells 48, 351 (1997).CrossRefGoogle Scholar
Servati, P., Vygranenko, Y., Nathan, A., Morrison, S., and Madan, A., J. Appl. Phys. 96, 7578 (2004).CrossRefGoogle Scholar
Vygranenko, Y., Chang, J., Nathan, A., IEEE J. Quantum Electron. 41, 697 (2005).Google Scholar
Koval, R. J., Pearce, J. M., Chen, Chi, Ferreira, G. M., Ferlauto, A. S., Collins, R. W., and Wronski, C. R., Mater. Res. Soc. Symp. Proc. 715, paper A6.1 (2002).CrossRefGoogle Scholar
Koval, R. J., Chen, Chi, Ferreira, G. M., Ferlauto, A. S., Pearce, J. M., Rovira, P. I., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 81, 1258 (2002).CrossRefGoogle Scholar
Ferreira, G.M., Chen, Chi, Koval, R.J., Pearce, J.M., Wronski, C.R., Collins, R.W., J. Non-Crystal. Solids 338–340, 694 (2004).CrossRefGoogle Scholar
Pearce, J. M., Podraza, N., CollinsJ, R. W., Al-Jassim, M. M., Jones, K. M., Deng, J. and Wronski, C. R., J. Appl. Phys. 101, 114301 (2007).CrossRefGoogle Scholar
Smit, C., van Swaaij, R.A.C.M.M., Donker, H., Petit, A.M.H.N., Kessels, W.M.M. and van de Sanden, M.C.M., J. Appl. Phys. 94, 3582 (2003).CrossRefGoogle Scholar
Deng, J. and Wronski, C. R., J. Appl. Phys. 98, 024509 (2005).CrossRefGoogle Scholar
Pearce, J. M., Koval, R. J., Ferlauto, A. S., Collins, R. W., and Wronski, C. R., Appl. Phys. Lett. 77, 3093 (2000).Google Scholar
Theil, J. A., Mat. Res. Soc. Symp. Proc. 762, paper A21.4 (2003).CrossRefGoogle Scholar
Fathi, E., Vygranenko, Y., Vieira, M., and Sazonov, A., Appl. Surf. Science 257, 8901 (2011).CrossRefGoogle Scholar