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Optimization of Ohmic Contacts on Lattice-Matched and Pseudomorphic AllnAs/InGaAs/InP

Published online by Cambridge University Press:  21 February 2011

M. Van Hove ,
T. Skrabka ,
H. Bender ,
W. De Raedt ,
M. Van Rossum  and
Y. Baeyens
M. Van Hove
Affiliation:
1MEC, Kapeldreef 75, B-3001 Leuven, Belgium
T. Skrabka
Affiliation:
1MEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
1MEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. De Raedt
Affiliation:
1MEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Rossum
Affiliation:
1MEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Baeyens
Affiliation:
KUL, ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Leuven, Belgium
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Abstract

Ohmic contacts are optimized on δ-doped lattice-matched (x=0.53) and pseudomorphic (x=0.80) lno.53Gao.47As/Alo.52Ino.48As/InxGa1-xAs/AI0.52ln0.48As layers grown on InP by molecular beam epitaxy (MBE). The layers are characterized by temperature-dependent Hall measurements (4-300 K) and Shubnikov-de Haas measurements at 1.2 K. Lowest specific transfer resistance (< 0.1 O.mm) is obtained with a Ni/AuGe/Ni/Au metal sequence alloyed at 280 °C for 1 min. The influence of the Ni content in the metallization is studied and AuGe layers evaporated from the eutectic composition (Au:Ge, 88:12 weight %) are compared with successively evaporated Au and Ge layers. It is shown that the resulting contact resistance is not very sensitive to changes in these parameters. The solid state reactions involved are studied by sputter Auger depth profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 463
Copyright
Copyright © Materials Research Society 1994

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References

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