Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:58:32.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

Published online by Cambridge University Press:  05 June 2013

Aritra Dhar  and
T. L. Alford
Aritra Dhar
Affiliation:
Department of Chemistry and Biochemistry,,Arizona State University, Tempe, Arizona 85287
T. L. Alford
Affiliation:
Department of Chemistry and Biochemistry,,Arizona State University, Tempe, Arizona 85287 School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287
Get access

Abstract

Highly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

Keywords

Hall effecttransparent conductorthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx03-33
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Granqvist, C. G. and Hultaker, A., Thin Solid Films 411, 1 (2002).CrossRefGoogle Scholar
Gordon, R. G., MRS Bull. 25, 52 (2000).CrossRefGoogle Scholar
Guillen, C. and Herrero, J., Sol. Energy Mater. Sol. Cells 92, 938 (2008).CrossRefGoogle Scholar
Sivaramakrishnan, K. and Alford, T. L., Appl. Phys. Letts. 94, 052104 (2009).CrossRefGoogle Scholar
Sivaramakrishnan, K., Theodore, N.D. and Alford, T. L., J. Appl. Phys. 106, 063510 (2009)CrossRefGoogle Scholar
Kim, S., Moon, Y., Moon, D., Hong, M., Jeon, Y., and Park, J., J. Korean Phys. Soc. 49, 1256 (2006).Google Scholar
Bender, M., Seelig, W., Daube, C., Frankenberger, H., Ocker, B. and Stollenwerk, J., Thin Solid Films 326, 72 (1998).CrossRefGoogle Scholar
Sahu, D. R., Lin, S., and Huang, J., Applied Surface Science 252, 7509 (2006).CrossRefGoogle Scholar
Jeong, Jin-A, Park, Yong-Seok and Han-Ki Kim, , J. Appl. Phys. 107, 023111 (2010).CrossRefGoogle Scholar
Dhar, A. and Alford, T. L., J. Appl. Phys. 112, 103113 (2012).CrossRefGoogle Scholar
Kawamura, M., Abe, Y., and Sasaki, K., Thin Solid Films 515, 540 (2006).CrossRefGoogle Scholar
Sinha, M. K., Mukherjee, S. K., Pathak, B., Paul, R. K., and Barhai, P. K., Thin Solid Films 515, 1753 (2006). 93CrossRefGoogle Scholar
Chang, H. J., Huang, K. M., Chu, C. H., Chen, S. F., Huang, T. H., and Wu, M. C., ECS Transactions 28, 137 (2010).CrossRefGoogle Scholar
Inoue, K., Tominaga, K., Tsuduki, T., Mikawa, M., Moriga, T., Vacuum 83, 552 (2009).CrossRefGoogle Scholar
Doolittle, L. R., Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).CrossRefGoogle Scholar
Ahn, B. D., Jeong, W. H., Shin, H. S., Kim, D. L., Kim, H. J., Jeong, J. K., Choi, S.-H., Han, M.-K., Electrochemical and Solid-State Letts. 12, H430 (2009).CrossRefGoogle Scholar
Haacke, G., J. Appl. Phys. 47, 4086 (1976).CrossRefGoogle Scholar