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Optimization of Ga(In)NAs thin film growth by atomic hydrogen-assisted molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Yukiko Shimizu ,
Naoya Miyashita  and
Yoshitaka Okada
Yukiko Shimizu
Affiliation:
[email protected], Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan, +81-298-53-6902, +81-298-53-6902
Naoya Miyashita
Affiliation:
[email protected]
Yoshitaka Okada
Affiliation:
[email protected]
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Abstract

The effect of growth temperature on the crystal quality and optical properties of Ga(In)NAs films was investigated over a range of 340 ∼ 520 °C. We found that Ga(In)NAs films fabricated at lower growth temperatures generally result in an improved crystal quality. An XRD linewidth of as low as 45 arcsec was obtained for a 1 µm-thick Ga0.94In0.06N0.01As0.99 thin film grown at 380 °C. This is ∼1/2 of that grown at the conventionally-adopted growth temperature of 480 °C. After annealing, an improved optical property represented by a higher PL intensity compared to the conventional growth method (annealed, Tgrowth = 480 °C) was also obtained in the 1 µm-thick Ga0.94In0.06N0.01As0.99 thin film grown at low temperature of 380 °C.

Keywords

III-Vmolecular beam epitaxy (MBE)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-32
Copyright
Copyright © Materials Research Society 2006

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References

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