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Optimization of Annealing Conditions for ZnO-based Thin Films Grown Using MOCVD

Published online by Cambridge University Press:  10 September 2014

Anas Mazady ,
Abdiel Rivera  and
Mehdi Anwar
Anas Mazady
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
Abdiel Rivera
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
Mehdi Anwar*
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
*
*Email: [email protected]
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Abstract

In this work, effects of thermal annealing on the structural and optical properties of ZnO thin films grown on p-Si and GaN substrates using metalorganic chemical vapor deposition (MOCVD) are investigated. Annealing at 600 °C results in optimum crystal and optical qualities of the ZnO thin films on both substrates. Smaller lattice mismatch between grown ZnO epitaxial layer on GaN substrates results in better film morphology as compared to p-Si substrates. Higher annealing temperature along with a slower thermal ramp provides better crystal quality of ZnO thin films on both substrates. Annealing ZnO thin films at 700 °C with a slower thermal ramp results in better crystal quality as is evident from a 56% reduction in the full-width at half maximum (FWHM) of the (002) peak compared to the as-grown films. The optical quality also enhances with a slower annealing rate. The determination of the optimum annealing conditions for different substrates has important implications in fabricating optimized and efficient ZnO based electronics.

Keywords

thin filmoxidechemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 3 - 8
Copyright
Copyright © Materials Research Society 2014 

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References

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