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Optimization of AICu Wiring Delay in Advanced CMOS Technology
Published online by Cambridge University Press: 15 February 2011
Abstract
Fluorinated high-density plasma and plasma-enhanced CVD SiO2 inter-metal dielectrics have been evaluated for 0.50- through 0.25- μm generation CMOS. Several integration issues are discussed, including the impact of fluorine-doped SiO2 on the yield, reliability, and RC delay of 0.7 - 1.8 μm pitch back-end-of-the-line AlCu/tungsten-stud wiring.
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- Copyright © Materials Research Society 1997
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