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Optically Detected Magnetic Resonance of Group IV and Group VI Donors in Al0.6Ga0.4As/GaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

E. Glaser ,
T.A. Kennedy ,
B. Molnar  and
M. Mizuta
E. Glaser
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375 U.S.A.
T.A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375 U.S.A.
B. Molnar
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375 U.S.A.
M. Mizuta
Affiliation:
Fundamental Research Laboratory, NEC Corporation, 34 Miyukigaoka, Tsukuba 305, Japan
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Abstract

The influence of chemically different donor species on the nature of shallow donor states in Al0.6Ga0.4As/GaAs heterostructures has been investigated by optically detected magnetic resonance (ODMR). Previous theoretical work by Morgan predicts a triplet state for group IV donors and a singlet state for group VI donors. ODMR experiments were performed on as-grown and implanted Si-, Se-, and S-doped epitaxial layers of Al0.6Ga0.4As grown on (001) GaAs substrates. The effective-mass states are modified by the heter-oepitaxial strain in these layers. The Si donors are characterized as quasi-independent valley states. The Se and S donors have valley-orbit splitting energies (i.e. chemical shifts) of 19-20 meV . The results indicate that Si, Se, and S donors are on the lattice sites in the metastable state of DX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 753
Copyright
Copyright © Materials Research Society 1990

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