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Optically Active Transition Metal Defects in Silicon

Published online by Cambridge University Press:  28 February 2011

Maria Celeste do Carmo ,
M.H. Nazaré ,
M.F. Thomaz ,
Irene Càlo ,
Fàtãma Cerqueira  and
G. Davies
Fàtãma Cerqueira
Affiliation:
Departamento and Centro de Fisica (INIC), Universidade de Aveiro, 3800 Aveiro, Portugal
G. Davies
Affiliation:
Department of Physics, King's College London, Strand, London WC2R 2LS, U.K.
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Abstract

Transition metals in silicon produce a number of photoluminescence bands.

In this paper we discuss and compare the electronic and vibronic properties of luminescence bands commonly related to iron, niquel, copper and gold impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 221
Copyright
Copyright © Materials Research Society 1989

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