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Optical Waveguides in GaAs/AlGaAs MQW Structures Formed by Silicon Induced Quantum Well Mixing

Published online by Cambridge University Press:  21 February 2011

A. C. Wismayer ,
B. L. Weiss  and
J. S. Roberts
A. C. Wismayer
Affiliation:
Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey, England.
B. L. Weiss
Affiliation:
Department of Electronic and Electrical Engineering University of Surrey, Guildford, Surrey, England.
J. S. Roberts
Affiliation:
Department of Electronic and Electrical Engineering University of Sheffield, Mappin Street, Sheffield, England.
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Abstract

Si implantation followed by furnace annealing has been used to produce the mixing of GaAs/AlGaAs multiquantum well (MQW) structures grown by MOVPE. Masked implants have been used to fabricate stripe optical waveguides. Results are presented here for the effect of the ion dose and the annealing time and it is shown that complete mixing occurs for a 1015 cm−2 dose of 500 keV Si+ after annealing at 750 °C for two hours. Waveguides fabricated using this process showed a minimum TE mode propagation loss of 33 dB cm−1 at a wavelength of 1.15 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 259
Copyright
Copyright © Materials Research Society 1989

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References

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