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Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

M. Smith ,
J. Y. Lin ,
H. X. Jiang ,
A. Khan ,
Q. Chen ,
A. Salvador ,
A. Botchkarev  and
H. Morkoc
M. Smith
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
A. Khan
Affiliation:
APA Optics Inc, Blaine, MN 55449
Q. Chen
Affiliation:
APA Optics Inc, Blaine, MN 55449
A. Salvador
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. Botchkarev
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. Morkoc
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Time-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 829
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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