Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-17T17:20:14.855Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Technique for Characterization of High Energy Ion Implanted Materials

Published online by Cambridge University Press:  25 February 2011

Gustavo E Aizenberg ,
Pieter L Swart  and
Beatrys M Lacquet
Gustavo E Aizenberg
Affiliation:
Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, P O Box 524, Auckland Park, 2006, South Africa
Pieter L Swart
Affiliation:
Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, P O Box 524, Auckland Park, 2006, South Africa
Beatrys M Lacquet
Affiliation:
Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, P O Box 524, Auckland Park, 2006, South Africa
Get access

Abstract

A new method for the characterization of high energy ion-implanted materials has been developed. The refractive index and thickness of the amorphous layer produced by ion-implantation as well as the recrystallized layer formed by annealing of the ionimplanted samples can be determined by means of this non-destructive optical technique.

For frequencies where the carriers do not respond, the measured reflectance is bilinear transformed, and further digital signal processing yields information about thickness and refractive index of the abovementioned layers. When working at optical frequencies where the carriers can respond to the electromagnetic field the physical position of the peak concentration follows directly from the processed reflectance data. Simulated and experimental data have been analyzed. The position of the boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for various steps of annealing. The algorithm has the advantage of being simple and time efficient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 349
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsukamoto, K., Komoro, S., Kuroi, T., Akasaka, Y.; Nucl. Instr. Meth. Phys. Res., B59/60 (1991) 584.CrossRefGoogle Scholar
2. Thompson;, P.E. Nucl. Instr. Meth. Phys. Res., B59/60 (1991) 592.Google Scholar
3. Trudeau, Y.B., Kajrys, G.E., Gagnon, G., Brebner;, J.L. Nucl. Instr. Meth. Phys. Res., B59/60 (1991) 609.CrossRefGoogle Scholar
4. Jones, K.S., Santana, C.J.; J. Mater. Res., 6 (1991) 1048.CrossRefGoogle Scholar
5. Tatarkiewicz, J.; Phys. Stat. Sol.(b), 153 (1989) 11.CrossRefGoogle Scholar
6. Hummel, R.E., Xi, W., Hagmann;, D.R. J. Electrochem. Soc., 137 (1990) 3583.CrossRefGoogle Scholar
7. Burns, T.M., Chongsawangvirod, S., Andrews, J.W., Irene, E.A., McGuire, G., Chevacharoeukul, S.; J. Vac. Sci. Technol., B9 (1991) 41.Google Scholar
8. Swart, P.L., Lacquet, B.M.; J. Appl. Phys., 70 (1991) 1069.CrossRefGoogle Scholar
9. Swart, P.L., Lacquet, B.M.; J. Electron. Mat., 19 (1990) 1383.CrossRefGoogle Scholar
10. Hubler, G.K., Malmberg, P.R., Waddell, C.N., Spitzer, W.G., Fredrickson, J.E.; Rad. Effects, 60 (1982) 35.CrossRefGoogle Scholar
11. Waddell, C.N., Spitzer, W.G., Hubler, G.K., Fredrickson, J.E.; J. Appl. Phys., 53 (1982) 172.CrossRefGoogle Scholar
12. Wang, K., Spitzer, W.G., Hubler, G.K., Donovan, E.P.; J. Appl. Phys., 57 (1985) 2739.Google Scholar
13. Liou, L.L., Spitzer, W.G., Fredrickson, J.E., Kwun, S.; J. Appl. Phys., 59 (1986) 1927.CrossRefGoogle Scholar
14. Lacquet, B.M., Swart, P.L.; J. Electron. Mat., 20 (1991) 379.CrossRefGoogle Scholar