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Optical Switching of Coherent VO2 Precipitates Embedded in Sapphire

Published online by Cambridge University Press:  21 February 2011

L. A. Gea ,
L. A. Boatner ,
J. D. Budai  and
R. A. Zuhr
L. A. Gea
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA 37831
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA 37831
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA 37831
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA 37831
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Abstract

In this work, we report the formation of a new type of active or “smart” surface that is produced by ion implantation and thermal processing. By co-implanting vanadium and oxygen into a single-crystal sapphire substrate and annealing the system under appropriate conditions, it was possible to form buried precipitates of vanadium dioxide that were crystallographically oriented with respect to the host AI2O3 lattice. The implanted VO2 precipitate system undergoes a structural phase transition that is accompanied by large variations in the optical transmission which are comparable to those observed for thin films of VO2 deposited on sapphire. Co-implantation with oxygen was found to be necessary to ensure good optical switching behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 215
Copyright
Copyright © Materials Research Society 1996

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References

1 Morin, F. J., Phys. Rev. Lett. 3, 34 (1959).Google Scholar
2 Roach, W. R., Appl. Phys. Lett. 19, 453 (1971).Google Scholar
3 Smith, A. W., Appl. Phys. Lett. 23, 437 (1973).Google Scholar
4 Chivian, J. S., Scott, M. W., Case, W. E., and Krasutsky, N. J., IEEE J. Quantum Electron. QE-21. 383 (1985)Google Scholar
5 Gea, L. A. and Boatner, L. A., Appl. Phys. Lett.., submitted for publicationGoogle Scholar
6 Case, F. C., J. Vac. Sci. Technol. A2, 1509 (1984).Google Scholar
7 Kim, D. H. and Kwok, H. S., Appl Phys. Lett.. 65, 3188 (1994).Google Scholar
8 JCPDS, International Center for Diffraction Data, 1601 Park Lane, Swarthmore, PAGoogle Scholar
9 De Natale, J. F., Hood, R. J., and Harker, A. B., J. Appl. Phys. 66, 5844 (1989).Google Scholar
10 Partlow, D. P., Gurkovich, S. R., Radford, K. C., and Denes, L. J., J. Appl. Phys. 70, 443 (1991).Google Scholar
11 Gea, L. A., Boatner, L. A., Rankin, J., and Budai, J. D., in “Beam Solid Interactions for Materials Synthesis and Characterization”, Editors: Luzzi, D. E., Heinz, T. F., Iwaki, M., Materials Research Society Symposium Proceedings Vol.354, May 1995.Google Scholar