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Optical Switches Based on Vanadium Dioxide Films Grown By The Sol-Gel Process

Published online by Cambridge University Press:  28 February 2011

Richard S. Potember  and
Kenneth R. Speck
Richard S. Potember
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, Maryland 20723, USA
Kenneth R. Speck
Affiliation:
The Johns Hopkins University Applied Physics Laboratory Laurel, Maryland 20723, USA
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Abstract

Vanadium dioxide thin films have been grown from vanadium tetrakis (t-butoxide) by the sol-gel process. A new method for the synthesis of the vanadium precursor was also developed. Films were deposited by dipcoating glass slides from an isopropanol solution, followed by post-deposition annealing of the films at 600°C under nitrogen. The properties of these films, to a high degree, were a function of crystalline boundaries and crystalline grain size. These gel-derived VO2 films undergo a reversible semiconductor-to-metal phase transition near 72°C, exhibiting characteristic resistive and spectral switching comparable with near stoichiometric VO2 films prepared on non-crystalline substrates by other techniques. Films were doped with hexavalent transition metal oxides to demonstrate lowering of the transition of the transition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990 , 753
Copyright
Copyright © Materials Research Society 1990

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References

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