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Optical Studies of MOCVD InxGa1-xN Alloys

Published online by Cambridge University Press:  10 February 2011

B.D. Little ,
W. Shan ,
J.J. Song ,
Z.C. Feng ,
M. Schurman  and
R.A. Stall
B.D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
W. Shan
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
J.J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
Z.C. Feng
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerest, NJ 08873
M. Schurman
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerest, NJ 08873
R.A. Stall
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerest, NJ 08873
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Abstract

We present the results of optical studies of InxGa1-xN alloys (0<x<0.2) grown by metalorganic chemical vapor deposition on top of thick GaN epitaxial layers with sapphire as substrates. Photoluminescence (PL) and photoreflectance (PR) measurements were performed at various temperatures to determine the band gap and its variation as a function of temperature for samples with different indium concentrations. Carrier recombination dynamics in the alloy samples were studied using time-resolved luminescence spectroscopy. While the measured decay time for the alloy near-band-edge PL emissions was observed to be generally around a few hundred picoseconds at 10 K, it was found that the decay time decreased rapidly as the sample temperatures increased. This indicates a strong influence of temperature on the processes of trapping and recombination of excited carriers at impurities and defects in the InGaN alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 823
Copyright
Copyright © Materials Research Society 1997

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References

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