Hostname: page-component-5cf477f64f-2wr7h Total loading time: 0 Render date: 2025-04-03T03:46:43.747Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Studies of InP/GaAs/InP Single Strained Layers

Published online by Cambridge University Press:  25 February 2011

Dan Hessman ,
Mats-Erik Pistol ,
Janos Olajos ,
Werner Seifert ,
Xiao Liu  and
Lars Samuelson
Dan Hessman
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Mats-Erik Pistol
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Janos Olajos
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Werner Seifert
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Xiao Liu
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Lars Samuelson
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Get access

Abstract

Single strained layers of GaAs grown on InP have been studied using different optical techniques. Absorption has been measured on these structure which are believed to be type II. The absorption is found to increase slowly close to the threshold and the spectral shape is very similar to photoluminescence excitation spectra. No sharp excitonic peaks were found. The absorption has been modelled using K.p-theory including strain and confinement. The agreement with experiments is good with respect to the shape of the spectra but differs a factor of three with respect to the magnitude of the absorption. The strain and composition of the samples have been measured by a combination of photoluminescence and Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 203
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cho, A. Y., Appl. Phys. Lett. 19, 467 (1971).Google Scholar
2. Ludowise, M. J., J. Appl. Phys. 50, R31 (1985).Google Scholar
3. Gershoni, D., Temkin, H., Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., and Panish, M. B., Phys. Rev. Lett. 60, 448 (1988).Google Scholar
4. Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructure (Les Editions de Physique, Paris, 1988).Google Scholar
5. Pistol, M.-E., Gustafsson, A., Gerling, M., Samuelson, L., and Titze, H., J. Cryst. Growth 107, 458 (1991).Google Scholar
6. Blakeslee, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
7. Pistol, M.-E., Gerling, M., Hessman, D., and Samuelson, L., Phys. Rev. B45, 3628 (1992).Google Scholar
8. Jusserand, B. and Cardona, M. in Light Scattering in Solids V, edited by Cardona, M. and Güntherodt, G., (Springer-Verlag, Berlin, 1989).Google Scholar
9. Cerdeira, F., Buchenauer, C.J., Pollak, F. H., and Cardona, M., Phys. Rev. B5, 580 (1972).Google Scholar
10. Luttinger, J. M. and Kohn, W., Phys. Rev. 97, 869 (1955).Google Scholar
11. Bahder, T. B., Phys. Rev. B41, 11992 (1990).Google Scholar
12. Baraff, G. A. and Gershoni, D., Phys. Rev. B43, 4011 (1991).Google Scholar
13. Bassani, F. and Pastori-Parravicini, G., Electronic states and optical transitions in solides (Pergamon, Oxford, 1975).Google Scholar