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Optical Properties of ZrF4 Thin Film Formed by Vapour Phase Deposition

Published online by Cambridge University Press:  15 February 2011

Takao Kono ,
Shinzo Morita ,
Toshio Goto  and
Akira Nishiwaki
Takao Kono
Affiliation:
Nagoya University, CCRAST.
Shinzo Morita
Affiliation:
Nagoya University, CCRAST.
Toshio Goto
Affiliation:
Nagoya University Dept. of Electronics. Furo-cho, Chikusa-ku, Nagoya-shi, 460-01 Aichi, Japan.
Akira Nishiwaki
Affiliation:
Chubu University, Dept. of Electronics. Matsumotocho 1200, Kasugai-shi, 487 Aichi, Japan.
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Abstract

Zirconium fluoride (ZrF4 ) thin films were formed by plasma CVD and evaporation for thin-film optical wave guide. In the case of plasma CVD, ZrF4 compound was actually observed to be synthesized from the vapour of Zr and CF4 gas according to. ESCA measurement, even if the film contained impurities. As for evaporation, transparent and amorphous film was obtained and optical transmission loss was measured by scattering detection method, and the loss was calculated to be 9.5 dB/cm. But when only ZrF4 was deposited, thin film was tarnished to be white because of adsorption of moisture. Therefore, simultaneous evaporation of ZrF4 and BaF2 was performed and the charastaristic was stabilized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 127
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Shibata, S., Horiguchi, M., Jinguji, K., Mitachi, S., Kanamori, T. and Manabe, T., Electron Lett., vol.17, pp.775–777, 1981.CrossRefGoogle Scholar
[2] Kanamori, T. and Sakaguchi, S., Jpn. J. Appl. Phys., vol.25, pp. L468–L470, 1986.CrossRefGoogle Scholar