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Optical Properties of Strained Polycrystalline CuInS2 Layers

Published online by Cambridge University Press:  01 February 2011

Jens Eberhardt ,
Heinrich Metzner ,
Rüdiger Goldhahn ,
Florian Hudert ,
Kristian Schulz ,
Udo Reislöhner ,
Thomas Hahn ,
Janko Cieslak  and
Wolfgang Witthuhn
Jens Eberhardt
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Jena, 07743, Germany
Heinrich Metzner
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
Rüdiger Goldhahn
Affiliation:
[email protected], Technische Universität Ilmenau, Institut für Physik, PF 100565, Ilmenau, 98684, Germany
Florian Hudert
Affiliation:
[email protected], Technische Universität Ilmenau, Institut für Physik, PF 100565, Ilmenau, 98684, Germany
Kristian Schulz
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
Udo Reislöhner
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
Thomas Hahn
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
Janko Cieslak
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
Wolfgang Witthuhn
Affiliation:
[email protected], Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, Jena, 07743, Germany
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Abstract

Using molecular beams, polycrystalline thin CuInS2 (CIS) films of different thicknesses were grown on Si substrates covered with a sputtered Mo-buffer layer. Systematic photoluminescence and photoreflectance measurements were performed to investigate the influence of strain - introduced during growth - on the optical properties. The transition energy of the free A-exciton (FXA) decreases with increasing tensile strain caused by (i) increasing thickness of the Mo buffer layer and (ii) decreasing thickness of the CIS layer. Furthermore, the energetic splittings between FXA, FXB, and FXC increase with increasing tensile strain. When combined with X-ray diffraction data, the oscillator strengths of the excitonic transitions yield information on the strain distribution within the films.

Keywords

thin filmphotovoltaicoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-25
Copyright
Copyright © Materials Research Society 2007

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